Advances in high brightness semiconductor lasers

Advances in semiconductor laser bars and arrays

Advances in high power semiconductor lasers such as increased spectral brightness, increased spatial brightness, and reduced cost architectures at wavelengths from the near infrared to the eye-safe regime have the potential to dramatically improve diode pumped systems and enable new direct diode applications. Data are presented which demonstrate both edge emitter devices and high power surface ...

High-Power High-Brightness Lasers

High power high brightness diode lasers are gaining more and more interest for applications previously dominated by expensive and inefficient solid-state lasers due to their better efficiency, brightness and compactness. The significant fact about conventional high brightness optical sources is that they exhibit about an order of magnitude higher brightness than broad-area semiconductor lasers....

High-Brightness Unstable-Resonator Semiconductor Laser Diodes

High-power high-brightness unstable-resonator edge-emitting semiconductor laser diodes with dry-etched curved mirrors were fabricated and characterized. The epitaxial structure was optimized for high output power operation and consists of a GaAs/AlGaAs gradedindex separate-confinement heterostructure (GRINSCH) with a single 980-nm-emitting InGaAs quantum well. The curved mirrors of the unstable...

Random-modulation Cw Lidar System for Space-borne Carbon Dioxide Remote Sensing Based on a High-brightness Semiconductor Laser

Performance enhancement of the high-power laser diodes and arrays by use of the volume Bragg gratingTM technology

Volume Bragg gratingTM (VBGTM) technology has been shown to improve spectral characteristics of the high-power laser diodes and arrays. We review the recent advances in VBG technology that lead to better spectral performance as well as improvements in spatial brightness of the high-power laser diode arrays. The VBG technology has been applied to manufacturing of high-power laser diode arrays su...